n-channel enhancement mode description the ams 2n7002 has been d esigned t o minimize o n-state resistance while provide rugged, reliable, and fast switching performance. it can be used in most applications requiring up to 400ma dc and can deliver pulsed currents up to 2a. the product is particularly suited for low voltag e, low current applications such as small servo motor control, power mosfet gate drivers, and other switching applications features * high density cell design for low r ds(on) . * voltage contr olled small signal switc h * rugged and reliable * high saturation current capability symbol ordering information pin assignment ordering number package 1 2 3 4 5 6 packing 2n7002g-ae2-r sot-23-3 s g d - - - tape reel marking sot-23-3 sot-23-3
absolute maximum ratings (ta=25 ? off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =10 on characteristics (note) gate threshold voltage v gs(th) v gs = v ds , i d =250 ? ? dynamic characteristics input capacitance c iss v ds =25v,v gs =0v,f=1.0mhz 20 50 pf output capacitance c oss 11 25 pf reverse transfer capacitance c rss 4 5 pf turn-on time t on v dd =30v, r l =150 ? ? ? ? drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs =0v, is=115ma (note ) 0.88 1.5 v maximum pulsed drain-source diode forward current i sm 0.8 a maximum continuous drain-source diode forward current is 115 ma note: pulse test: pulse width
test circuit and waveform
typical characteristics 0 5 4 3 2 1 1.5 1 0.5 0 2 3.0v 2 1. 6 1.2 0.8 0.4 v gs =4.0 v 3 2.5 2 1.5 1 0 0.5 drain-source current, i d (a) drain-source voltage, v ds (v) v gs =10v 4.0v 5.0v 6.0v 7.0v 8.0v 9.0v on-resistance characteristics normalized drain-source on-resistance, r ds (on) drain current, i d (a) on-resistance varisation with gate voltage and drain current 4.5v 5.0v 6.0v 7.0v 8.0v 9.0v 10v 100 75 0 - 25 2 1.5 1 - 50 0.5 1.6 1.2 0.8 0.4 v gs =10v 3 2.5 2 1.5 1 0 0.5 25 50 150 125 0.75 1. 25 1.75 2 0 t j = 125 25 normalized drain-source on- resistance, r ds(on) junction temperature, t j (c) on-resistance varisation with temperature v gs =10v i d =500ma normalized drain-source on- resistance, r ds (on) drain current,i d (a) on-resistance varisation with drain current and temperature 0 10 8 6 4 2 100 75 0 -25 -50 25 50 125 1. 6 1. 2 1. 8 0. 4 2 0 150 1.1 1.05 1 0.95 0.9 0.85 0.8 drain current, i d (a) gate to source voltage, v gs (v) transfer characteristics v ds =10v 25 125 normalized gate-source threshold voltage, v gs(th) junction temperature, t j (c) gate threshold varisation with temperature v gs = v ds i d = 1ma
typical characterics (cont.)
disclaimer: ? ams reserves the rig ht t o make ch an g es t o the inf ormation herei n f or the improvement of the design and performance without further notice! customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. ? all semiconductor prod uc t s malf u nction or f ail wi th som e probability under special conditio ns . when using ams prod uc t s in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essenti al measures to avoid situation s in which a malf unction or failure of such ams products could cause loss of body injury or damage to property. ? ams will supply the be s t po ss i ble product for cu s tomers!
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